Photovoltaic bracket zinc layer thickness detector

What is a ZnO-based photovoltaic UV photodetector?

In 2005, Moon et al. fabricated a ZnO-based photovoltaic UV photodetector with ZnO and arsenic-doped ZnO respectively as n-type and p-type materials, which yielded a photocurrent of ~ 2 mA at a wavelength of 325 nm and biasing voltage of − 3 V 23.

Can azo-based UV photodetectors be used in photovoltaic and photoconductive configurations?

In summary, we fabricated two AZO-based UV photodetectors in photovoltaic and photoconductive configurations using the sputtering method. In order to create a suitable p–n junction in the photovoltaic configuration, we employed the (Mg and N)-doped CuCrO 2 as the p-type layer.

Is zinc oxide a good material for UV sensing?

Zinc oxide (ZnO) with a wide bandgap of > 3.1 eV, a high electron mobility of ~ 200 cm 2 V −1 s −1, and an exciton binding energy of ~ 60 meV has proven to be an outstanding material for UV detection 13, 14. It has been studied in both forms of photoconductive and photovoltaic structures for UV sensing.

How to reduce leakage current in organic photodetectors?

Herein, it is shown that leakage current in organic photodetectors can be effectively reduced to an intrinsic lower limit by using a composite hole blocking layer (HBL) that consists of zinc oxide (ZnO) blended with different weight concentration of polymer polyethylenimine ethoxylated (PEIE).

Does -GA 2 O 3 /Muscovite heterostructure provide UV-C photovoltaic detector?

The epitaxial growth of β-Ga 2 O 3 is also compared due to importance of channel layer in the photodetector performance. Thus, low temperature grown β-Ga 2 O 3 /muscovite heterostructures provided UV-C photovoltaic detector with simple MSM architecture and ultra-low dark current.

Can a semiconductor-based VUV photovoltaic detector achieve zero power consumption?

However, the most desirable semiconductor-based VUV photovoltaic detector capable of achieving zero power consumption has not yet been achieved.